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Preliminary
R2A20132SP
Critical Conduction Mode Interleave PFC Control IC
REJ03D0921-0100 Rev.1.00 Oct 02, 2009
Description
The R2A20132SP controls two boost converters to provide a active power factor correction. The R2A20132SP is based on R2A20112 and additional functions are Slave drop function at light load, Off time control, Brownout, Double OVP, Dynamic under voltage protection, and ZCD signal open detection. Also the reference voltage tolerance is improved. The R2A20132SP adopts critical conduction mode for power factor correction and realizes high efficiency and a low switching noise by zero current switching. Interleaving function improve ripple current on input or output capacitor by 180 degrees phase shift. The feedback loop open detection, over current protection are built in the R2A20132SP, and can constitute a power supply system of high reliability with few external parts.
Features
* Maximum ratings Supply voltage Vcc: 24 V Operating junction temperature Tj-opr: -40 to +150C * Electrical characteristics VREF output voltage VREF: 5.0 V 1.5% UVLO operation start voltage Vuvlh: 10.5 V 0.7 V UVLO operation shutdown voltage Vuvll: 9.3 V 0.5 V UVLO hysteresis voltage Hysuvl: 1.2 V 0.5 V * Functions Boost converter control with critical conduction mode Interleaving control with slave drop (SD) function at light load Off time control (OTC) function: Switching loss is decreased at light load. Brownout function Double OVP: Two line sense for over voltage protection Dynamic under voltage protection (DUVP): Sense for under voltage protection AC Hi voltage detection (ACDET) Feedback loop open detection ZCD signal open detection Master and Slave independenced over current protection 140 s restart timer Package lineup: Pb-free SOP-20
Ordering Information
Part No. R2A20132SPW0 Package Name FP-20DAV Package Code PRSP0020DD-B Taping Spec. 2000 pcs./one taping product
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 1 of 8
R2A20132SP
Preliminary
Pin Arrangement
ZCD-M ZCD-S BO VREF SD1 ACDET RT RAMP SD2 COMP 1 2 3 4 5 6 7 8 9 10 (Top view) 20 19 18 17 16 15 14 13 12 11 VCC GD-M GND GD-S OCP-M OCP-S OCT FB(+) OVP2 FB(-)
Pin Functions
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pin Name ZCD-M ZCD-S BO VREF SD1 ACDET RT RAMP SD2 COMP FB(-) OVP2 FB(+) OTC OCP-S OCP-M GD-S GND GD-M VCC Input/Output Input Input Input Output Input Output Input/Output Input/Output Input Output Input Input Input Input Input Input Output -- Output Input Function Master converter zero current detection input terminal Slave converter zero current detection input terminal Brownout input terminal Reference voltage output terminal Slave drop threshold voltage input terminal (for Lo line: 100 V) AC hi voltage detection output terminal Oscillator frequency setting terminal Ramp waveform setting terminal Slave drop threshold voltage change terminal (for Hi line: 200 V) Error amplifier output terminal Error amplifier input (-) terminal Over voltage detection terminal Error amplifier input (+) terminal Off time control input terminal Slave converter over current detection terminal Master converter over current detection terminal Slave converter Power MOSFET drive terminal Ground Master converter Power MOSFET drive terminal Supply voltage terminal
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 2 of 8
R2A20132SP
Preliminary
Block Diagram
VCC
VREF: 5 V ZCD-M Clamp
0 V to 6.4 V Vzcd_lo = 1.4 V 300 mVhys
UVLO
ON: 10.5 V OFF: 9.3 V
VCC
- + ZCD open detector
GD-M GND
ZCD-S RT VREF
1.4 V
Clamp
0 V to 6.4 V
- + Slave Control OCP COMP1 + - OCP COMP2 + -
OVP2 0.31 V
GD-S
+ -
Stop GD
OCP-M
OCP-M
BO
7.7 A
Hi: ON 3.6 V/3.0 V
OCP-S - + LOGIC
GD Disable
OCP-S
OVP BLOCK
COMP Discharge FB(-)
ACDET - +
VCC 7.7 A Hi: ON Slave off
OVP2 Error Amp - + FB(+)
FB(-)
Hi: SD1
SD2 SD1
1.3 V
+ COMP
VCC
-
+ Iramp
Hi: OFF 1.3 V
- OTC
RAMP
9.1 V
COMP
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 3 of 8
R2A20132SP
Preliminary
Absolute Maximum Ratings
(Ta = 25C)
Item Supply voltage GD peak current GD DC current ZCD terminal current BO terminal current RT terminal current Vref terminal current COMP terminal current ACDET terminal current Terminal voltage Vref terminal voltage Power dissipation Operating junction temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VCC Ipk-gd Idc-gd Izcd Ibom Irt Iref Icomp Iacdetm Vt-group1 Vt-group2 Vt-ref Pt Tj-opr Tstg Ratings -0.3 to 24 -300 +1200 -15 +60 +10 -10 300 -200 -5 1 500 -0.3 to Vcc -0.3 to Vref -0.3 to Vref + 0.3 1 -40 to +150 -55 to +150 Unit V mA mA mA A A mA mA A V V V W C C Note 3
4 5 6
Rated voltages are with reference to the GND terminal. For rated currents, inflow to the IC is indicated by (+), and outflow by (-). Shows the transient current when driving a capacitive load. This is the rated voltage for the following pins: RAMP, ACDET 5. This is the rated voltage for the following pins: FB(+), FB(-), OCP-M, OCP-S, OVP2, SD1, SD2, OTC 6. In case of R2A20132SP (SOP): ja = 120C/W This value is a thing mounting on 40 x 40 x 1.6 [mm], a glass epoxy board of wiring density 10%.
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 4 of 8
R2A20132SP
Preliminary
Electrical Characteristics
(Ta = 25C, VCC = 12 V, RT = 22 k, OCP = GND, CRAMP = 680 pF, FB(+) = 2.5 V, FB(-) = COMP, BO = 5 V, OVP2 = GND, SD1 = SD2 = GND)
Item Supply UVLO turn-on threshold UVLO turn-off threshold UVLO hysteresis Standby current Operating current Brownout VREF BO threshold voltage BO pin hysteresis current Output voltage Line regulation Load regulation Temperature stability Error amplifier Feedback voltage Input bias current1 Input bias current2 Open loop gain Upper clamp voltage Low voltage Source current1 Source current2 Sink current Transconductance RAMP RAMP charge current1 Symbol Vuvlh Vuvll Hysuvl Istby Icc Vbo Ibo Vref Vref-line Vref-load dVref Vfb(-) Ifb(-) Ifb(+) Av Vclamp-comp Vl-comp Isrc-comp1 Isrc-comp2 Isnk-comp gm Ic-ramp1 Min 9.8 8.8 0.7 -- -- 1.33 6.9 4.925 -- -- -- 2.462 -0.5 0.1 -- 8.0 -- -- -- -- 100 72 Typ 10.5 9.3 1.2 150 5.2 1.40 7.7 5.000 5 5 80 2.500 -0.3 0.3 50 9.1 0.1 -120 -1 300 180 82 Max 11.2 9.8 1.7 230 7.5 1.47 8.5 5.075 20 20 -- 2.538 -0.1 0.5 -- 10.6 0.3 -- -- -- 270 92 Unit V V V A mA V A V mV mV ppm/C V A A dB V V A mA A s A BO = 1 V Isource = -1 mA Isource = -1 mA, Vcc = 10 V to 24 V Isource = -1 mA to -5 mA Ta = -40 to +125C * FB(-)-COMP Short, RAMP = 0 V Measured pin: FB(-), FB(-) = 3 V Measured pin: FB(+), FB(+) = 3 V *1 FB(-) = 2.0 V, COMP: Open FB(-) = 3.0 V, COMP: Open FB(-) = 0 V to 1.5 V, COMP = 2.5 V FB(-) = 3 V to 1.5 V, COMP = 2.5 V FB(-) = 3.5 V, 1 COMP = 2.5 V * FB(-) = 2.45 V 2.55 V, COMP = 2.5 V RAMP = 0 V to 7 V, FB(-) = 2 V, COMP = 2 V, SD2 = 2.5 V RAMP charge current2 Ic-ramp2 150 165 180 A RAMP = 0 V to 7 V, FB(-) = 2 V, COMP = 5 V, SD2 = 2.5 V RAMP discharge current Low voltage Zero current detector Upper clamp voltage Lower clamp voltage ZCD low threshold voltage ZCD hysteresis Input bias current Id-ramp Vl-ramp Vzcdh Vzcdl Vzcd-lo Hyszcd Izcd 7 -- 5.8 -0.5 0.95 180 -14 15 17 6.4 0 1.40 300 -10 29 200 7.0 0.5 1.65 390 -6 mA mV V V V mV A FB(-) = 3 V, COMP = 2 V, RAMP = 1 V FB(-) = 3 V, COMP = 3 V, Isink = 100 A Isource = -3 mA Isink = 3 mA *1 *1 1.2 V < Vzcd <5 V
1
Test Conditions
VCC = 8.9 V, ZCD = OPEN FB(-) = open
Note:
1. Design spec.
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 5 of 8
R2A20132SP
Preliminary
Electrical Characteristics (cont.)
(Ta = 25C, VCC = 12 V, RT = 22 k, OCP = GND, CRAMP = 680 pF, FB(+) = 2.5 V, FB(-) = COMP, BO = 5 V, OVP2 = GND, SD1 = SD2 = GND)
Item Restart ACDET Restart time delay ACDET current ACDET voltage High threshold voltage Low threshold voltage Slave control Slave drop Phase delay On time ratio Input bias current Symbol Tstart Iacdet Vacdet Vacdet-hi Vacdet-lo Phase Ton-ratio Isd1 Isd2 SD pin hysteresis current Off time control Input bias current Isd-hys Iotc Min 105 0 0.2 3.2 2.6 160 -5 -1.0 -1.0 -8.5 -1.0 Typ 140 1 0.4 3.6 3.0 180 -- -0.5 -0.5 -7.7 0 Max 175 2 0.6 4.0 3.4 200 5 1.0 1.0 -6.9 1.0 Unit s A V V V deg % A A A A Test Conditions FB(-) = 2.0 V, COMP = 5 V * Vacdet = 12 V, Vbo = 3.3 V Iacdet = 500 A, Vbo = 3.7 V Measured Pin: BO Measured Pin: BO *1, *3 *1, *3 SD1 = 1 V, COMP = 4 V, FB(-) = 0 V SD2 = 1 V, COMP = 4 V, FB(-) = 0 V SD1 = 2 V, BO = 2 V, COMP = 2 V, FB(-) = 0 V OTC = 3 V
2
Note:
1. Design spec. 2.
Tstart (140 s) [A period without ZCD-M trigger] Vzcd-lo (1.4 V: provide 300 mV hysteresis)
ZCD-M
GD-M
Restart pulse
3.
Tperiod (25 s) Ton-m (17 s) GD-M
Tdelay GD-S
Ton-s
Phase =
Tdelay x 360 [deg] Tperiod Ton-s x 100 [%] Ton-m
Ton-ratio = 1 -
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 6 of 8
R2A20132SP
Preliminary
Electrical Characteristics (cont.)
(Ta = 25C, VCC = 12 V, RT = 22 k, OCP = GND, CRAMP = 680 pF, FB(+) = 2.5 V, FB(-) = COMP, BO = 5 V, OVP2 = GND, SD1 = SD2 = GND)
Item Gate drive Master gate drive rise time Slave gate drive rise time Master gate drive fall time Slave gate drive fall time Master gate drive low voltage Master gate drive high voltage Slave gate drive low voltage Slave gate drive high voltage Over current protection Over voltage protection Dynamic OVP threshold voltage OVP1 threshold voltage OVP1 hysteresis FB(-) open detect threshold voltage FB(-) open detect hysteresis OVP2 threshold voltage OVP2 hysteresis OVP2 pin input bias current Dynamic UVP threshold voltage ZCD open detector Slave ZCD open minimum detect delay time Vdovp Vovp1 Hys-ovp1 Vfbopen Hysfbopen Vovp2 Hys-ovp2 Iovp2 Vduvp tzcds VFB(+) x1.035 VFB(+) x1.075 50 0.45 0.16 2.635 50 -0.5 VFB(+) x0.89 -- VFB(+) x1.050 VFB(+) x1.090 100 0.50 0.20 2.685 100 0 VFB(+) x0.92 100 VFB(+) x1.065 VFB(+) x1.105 150 0.55 0.24 2.735 150 0.5 VFB(+) x0.95 -- ms COMP = 5 V, 1 Gate drive 10 kHz * mV V V V mV A V COMP = OPEN COMP = OPEN COMP = OPEN COMP = OPEN, VFB(-) = 2.5 V COMP = OPEN, VFB(-) = 2.5 V Measured pin: OVP2 COMP = OPEN V COMP = OPEN V COMP = OPEN OCP threshold voltage Symbol tr-gdm tr-gds tf-gdm tf-gds Vol1-gdm Vol2-gdm Voh-gdm Vol1-gds Vol2-gds Voh-gds Vocp Min -- -- -- -- -- -- 11.5 -- -- 11.5 0.28 Typ 30 30 5 5 0.02 0.01 11.9 0.02 0.01 11.9 0.31 Max 100 100 30 30 0.1 0.2 -- 0.1 0.2 -- 0.34 Unit ns ns ns ns V V V V V V V Test Conditions GD-M: 1.2 V to 10.8 V, CL = 100 pF GD-S: 1.2 V to 10.8 V, CL = 100 pF GD-M: 10.8 V to 1.2 V, CL = 100 pF GD-S: 10.8 V to 1.2 V, CL = 100 pF Isink = 2 mA Isink = 1 mA, VCC = 5 V Isource = -2 mA Isink = 2 mA Isink = 1 mA, VCC = 5 V Isource = -2 mA *
1
Note:
1. Design spec.
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 7 of 8
R2A20132SP
Preliminary
Package Dimensions
JEITA Package Code P-SOP20-5.5x12.6-1.27 RENESAS Code PRSP0020DD-B Previous Code FP-20DAV MASS[Typ.] 0.31g
*1
D 11
F
20
NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
bp
HE
E
Index mark
*2
Terminal cross section ( Ni/Pd/Au plating )
1 Z e
*3
10 bp x M L1
c
Reference Dimension in Millimeters Symbol
y
A1
L
Detail F
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Min Nom Max 12.60 13.0 5.50
0.00 0.10 0.20 2.20 0.34 0.40 0.46 0.15 0.20 0.25 0 8 7.50 7.80 8.00 1.27 0.12 0.15 0.80 0.50 0.70 0.90 1.15
REJ03D0921-0100 Rev.1.00 Oct 02, 2009 Page 8 of 8
A
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